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AWT6168 GSM/GPRS/Polar EDGE Power Amplifier Module with Integrated Power Control
ADVANCED PRODUCT INFORMATION - REV 0.1
FEATURES
* Internal Reference Voltage * Integrated Power Control Scheme * InGaP HBT Technology * ESD Protection on All Pins (2.5 kV) * Low profile 1.3 mm * Small Package Outline 7 mm x 7 mm * EGPRS Capable (class 12) GMSK MODE * Integrated power control (CMOS) * +35 dBm GSM850/900 Output Power * +33 dBm DCS/PCS Output Power * 55 % GSM850/900 PAE * 50 % DCS/PCS PAE * Power control range > 50 dB EDGE MODE * +30.5 dBm GSM850/900 Output Power * +29.5 dBm DCS/PCS Output Power * 25 % GSM850/900 PAE * 25 % DCS/PCS PAE
PRODUCT DESCRIPTION
This power amplifier module supports dual, tri and quad band applications for GMSK and 8-PSK modulation schemes using a polar architecture. There are two amplifier chains, one to support GSM850/900 bands, the other for DCS/PCS bands. The module includes an internal reference voltage and integrated power control scheme for use in both GMSK and 8-PSK operation. This facilitates fast and easy production calibration and reduces the number of external components required to complete a power control function. The amplifier's power control range is typically 55 dB, with the output power set by applying an analog voltage to VRAMP. All of the RF ports for this device are internally matched to 50 . Internal DC blocks are provided at the RF inputs.
APPLICATIONS * GSM850/GSM900/DCS/PCS Handsets * Dual/Tri/Quad Band PDA * GMSK and 8-PSK Polar Modulation Schemes
DCS/PCS_IN
DCS/PCS DCS/PCS_OUT
BS TX_EN VBATT CEXT VRAMP
Bias/Power Control
GSM850/900_IN
GSM850/900_OUT
GSM850/900
Figure 1: Block Diagram
01/2005
AWT6168
GND
VCC2
DCS/PCS_IN BS TX_EN VBATT CEXT VRAMP GSM_IN
1 2 3 4 5 6 7
18
17
16 15 14 13 12 11
DCS/PCS_OUT GND GND VCC_OUT GND GND GSM_OUT
8
9
10
Figure 2: Pinout (X - ray Top View)
Table 1: Pin Description
PIN 1 2 3 4 5 6 7 8
NAME
DESCRIPTION
PIN 10 11 12 13 14 15 16 17
GND
VCC2
NAME GSM_OUT GND GND VCC_OUT GND GND
DESCRIPTION GSM850/900 RF Output Ground Ground Control Voltage Output which must be connected to VCC2, no decoupling Ground Ground
DCS/PCS_IN DCS/PCS RF Input BS TX_EN VBATT C EXT VRAMP GSM_IN VCC2 Band Select Logic Input TX Enable Logic Input Battery Supply Connection Bypass Analog Signal used to control the output power GSM850/900 RF Input VCC Control Input for GSM850/900 Pre-amplifier Ground
DCS/PCS_OUT DCS/PCS RF Output GND Ground VCC Control Input for DCS/PCS Pre-amplifier
9
GND
18
VCC2
2
ADVANCED PRODUCT INFORMATION - Rev 0.1 01/2005
AWT6168
ELECTRICAL CHARACTERISTICS
Table 2: Absolute Maximum Ratings
PARAMETER Supply Voltage (VBATT) RF Input Power (RFIN) Control Voltage (VRAMP) Storage Temperature (TSTG)
MIN -0.3 -55
MAX +7 11 1.8 150
UNITS V dB m V C
Stresses in excess of the absolute ratings may cause permanent damage. Functional operation is not implied under these conditions. Exposure to absolute ratings for extended periods of time may adversely affect reliability.
Table 3: ESD Ratings
PARAMETER ESD Threshold voltage (RF ports) ESD Threshold voltage (control inputs)
METHOD HBM HBM
RATING >2.5 >2.5
UNIT kV kV
Although protection circuitry has been designed into this device, proper precautions should be taken to avoid exposure to electrostatic discharge (ESD) during handling and mounting. Human body model HBM employed is resistance = 1500, capacitance = 100pF.
ADVANCED PRODUCT INFORMATION - Rev 0.1 01/2005
3
AWT6168 Table 4: Operating Conditions
PARAMETER
Case temperature (TC) Supply voltage (VBATT) Power supply leakage current Control Voltage Range Turn on Time (TON) Turn Off Time (TOFF) Rise Time (TRISE) Fall Time (TFALL) VRAMP Input Capacitance VRAMP Input Current Duty Cycle
MIN
-20 3.0 0.2 -
TYP
3.5 1 3 -
MAX
85 4.8 5 1.6 1 1 1 1 10 50
UNITS
C V mA V ms ms ms ms pF mA %
COMMENTS
VBATT = 4.8 V, VRAMP = 0 V, TX_EN = LOW No RF applied
VRAMP = 0.2 V, TX_EN = LOW Y HIGH PIN = 5 dBm VRAMP = 0.2 V, TX_EN = LOW Y HIGH PIN = 5 dBm POUT = -10 dBm Y PMAX (within 0.2 dB) POUT = PMAX Y -10 dBm (within 0.2 dB)
The device may be operated safely over these conditions; however, parametric performance is guaranteed only over the conditions defined in the electrical specifications.
Table 5: Digital Inputs
PARAMETER
Logic High Voltage Logic Low Voltage Logic High Current Logic Low Current
SYMBOL
VIH VIL |IIH| |IIL|
MIN
1.2 -
TYP
-
MAX
3.0 0.5 30 30
UNITS
V V mA mA
Table 6: Logic Control Table
OPERATIONAL MODE
GSM850/900 DCS/PCS PA DISABLED
BS
LOW HIGH -
T X _E N
HIGH HIGH LOW
4
ADVANCED PRODUCT INFORMATION - Rev 0.1 01/2005
AWT6168 Table 7: Electrical Characteristics for GSM850/900 GMSK mode Unless otherwise specified: VBATT = 3.5 V, PIN = 5 dBm, Pulse Width =1154 s, Duty 25%, ZIN = ZOUT = 50 , TC = 25 C, VRAMP = 1.6 V, BS = LOW, TX_EN = HIGH, MODE = LOW
PARAMETER Operating Frequency Input Power Output Power, PMAX Degraded Output Power PAE @ PMAX Forward Isolation 1 Forward Isolation 2 Cross Isolation (2Fo @ DCS/PCS port) Second Harmonic Third Harmonic
( Fo )
MIN 824 880 3 34.5 32.0 -
TYP 5 35 32.5 55 -37 -25 -25 -20 -30
MAX 849 915 8 -
UNIT MHz dB m dB m dB m % dB m dB m dB m dB m dB m
COMMENTS
Freq = 824 to 915 MHz VBATT = 3.0 V, TC = 85 C PIN = 3 dBm Freq = 824 to 915 MHz TX_EN = LOW, PIN = 8 dBm TX_EN = HIGH,VRAMP = 0.2V, PIN = 8 dBm VRAMP =0.2V to VRAMP_MAX Over all output power levels Over all output power levels
-
VSWR = 8:1 All Phases , POUT < 34.5 dBm Stability Ruggedness 10:1 RX Noise Power Input Return Loss -86 -80 -86 -36 -30 2.5:1 dB m dB m dB m dB m dB m VSWR FOUT < 1 GHz FOUT > 1 GHz All Load Phases FTX = 849 MHz, RBW = 100 kHz FRX = 869 to 894 MHz, POUT < 34.5 dBm FTX = 915 MHz, RBW = 100 kHz, FRX = 925 to 935 MHz, POUT < 34.5 dBm FTX = 915 MHz, RBW = 100 kHz, FRX = 935 to 960 MHz, POUT < 34.5 dBm Over all output power levels
ADVANCED PRODUCT INFORMATION - Rev 0.1 01/2005
5
AWT6168 Table 8: Electrical Characteristics for GSM850/900 EDGE mode Unless otherwise specified: VBATT = 3.5 V, PIN = 5 dBm, VRAMP = 1.6 V, Pulse Width =1154s, Duty 25% ZIN = ZOUT = 50 , TC = 25 C, BS = LOW, TX_EN = HIGH, MODE = HIGH PARAMETER Operating Frequency PAE @ 30.5 dBm Dynamic Range Gain Slope
( Fo )
MIN 824 880 -
TYP 25 55 2.39 2.78 3.34 2.89 1.74 1.84 2.49 -25 -20 -30
MAX 849 915 300 -
UNIT MHz % dB dB/V
COMMENTS
VRAMP = 0.2 V to 1.6 V POUT / 5 dBm
AM - PM / S21 Phase Deviation
<5 dBm +5 dBm +10 dBm deg/dB +15 dBm +20 dBm +25 dBm +30 dBm dB m dB m dB m Over all output power levels Over all output power levels
Cross Isolation (2Fo @ DCS/PCS port) Second Harmonic Third Harmonic
VSWR = 8:1 All Phases, POUT < 30.5 dBm Stability RX Noise Power Input Return Loss -86 -80 -86 -36 -30 2.5:1 dB m dB m dB m dB m dB m VSWR FOUT < 1 GHz FOUT > 1 GHz FTX = 849 MHz, RBW = 100 kHz FRX = 869 to 894MHz, POUT < 30.5 dBm FTX = 915 MHz, RBW = 100 kHz, FRX = 925 to 935 MHz, POUT < 30.5 dBm FTX = 915 MHz, RBW = 100 kHz, FRX = 935 to 960 MHz, POUT < 30.5 dBm
6
ADVANCED PRODUCT INFORMATION - Rev 0.1 01/2005
AWT6168 Table 9: Electrical Characteristics for DCS/PCS GMSK mode Unless otherwise specified: VBATT = 3.5 V, PIN = 5 dBm, Pulse Width =1154 s, Duty 25%, ZIN = ZOUT = 50 , TC = 25 C, VRAMP = 1.6 V, BS = HIGH, TX_EN = HIGH, MODE =LOW
PARAMETER Operating Frequency Input Power Output Power, PMAX Degraded Output Power PAE @ PMAX Forward Isolation 1 Forward Isolation 2 Second Harmonic Third Harmonic MIN 1710 1850 3 32 29.5 TYP 5 33 30.5 50 -37 -17 -20 -30 MAX 1785 1910 8 UNIT MHz dB m dB m dB m % dB m dB m dB m dB m VBATT = 3.0 V, TC = 85 C PIN = 3 dBm Freq = 1710 to 1910 MHz TX_EN = LOW, PIN = 8 dBm TX_EN =HIGH, VRAMP = 0.2 V, PIN = 8 dBm Over all output power levels Over all output power levels COMMENTS
VSWR = 8:1 All Phases , POUT < 32dBm Stability Ruggedness 10:1 RX Noise Power Input Return Loss -80 2.5:1 dB m VSWR -80 -36 -30 dB m dB m dB m FOUT < 1 GHz FOUT > 1 GHz All Load Phases FTX = 1785 MHz, RBW = 100 kHz, FRX =1805 to 1880 MHz, POUT < 32 dBm FTX = 1910 MHz, RBW = 100 kHz, FRX = 1930 to 1990 MHz, POUT < 32 dBm Over all output power levels
ADVANCED PRODUCT INFORMATION - Rev 0.1 01/2005
7
AWT6168 Table 10: Electrical Characteristics for DCS/PCS EDGE mode Unless otherwise specified: VBATT = 3.5 V, PIN = 5 dBm, VRAMP = 1.6 V, Pulse Width =1154s, Duty 25%, ZIN = ZOUT = 50, TC = 25 C , BS =HIGH, TX_EN = HIGH, MODE = HIGH PARAMETER Operating Frequency PAE @ 29.5 dBm Dynamic Range Gain Slope
( Fo )
MIN 1710 1850 -
TYP 25 50 1.92 1.65 2.54 2.31 1.66 1.61 1.03 0.92 -20 -30
MAX 1785 1910 300 -
UNIT MHz % dB dB/V
COMMENTS
VRAMP = 0.2 V to 1.6 V POUT / 0 dBm
AM - PM / S21 Phase Deviation
<0 dBm 0 dB m +5 dBm +10 dBm deg/dB +15 dBm +20 dBm +25 dBm +28 dBm dB m dB m Over all output power levels Over all output power levels
Second Harmonic Third Harmonic
VSWR = 8:1 All Phases, POUT < 29.5 dBm Stability RX Noise Power Input Return Loss -80 2.5:1 dB m VSWR -80 -36 -30 dB m dB m dB m FOUT < 1 GHz FOUT > 1 GHz FTX = 1785 MHz, RBW = 100 kHz FRX = 1805 to 1880 MHz, POUT < 29.5 dBm FTX = 1910 MHz, RBW = 100 kHz, FRX = 1930 to 1990 MHz, POUT < 29.5 dBm
8
ADVANCED PRODUCT INFORMATION - Rev 0.1 01/2005
AWT6168
APPLICATION INFORMATION
18
17
VCC2
DCS/PCS RF INPUT
GND
1 2
DCS/PCS_PIN BS TX_EN VBAT T CEXT VRAMP
DCS/PCS_OUT GND
16 15 14 13 56pF ** 12 11 10
DCS/PCS RF OUTPUT
BAND SELECT TX ENABLE BATTERY VOLTAGE
1nF ++ 1nF ++ 47uF ++ 22nF **
3 4 2.7pF ** 5 6
AWT6168
GND VCC_OUT GND GND
DAC OUTPUT
10K* 27pF*
7
8
9
* Filtering may be required to filter noise from baseband. ** This component should be placed as close to the device pin as possible. ++ These components are recommended as good design practice for improving noise rejection characteristics. The values specified are not critical as they may not be required in the final application.
Figure 3: Recommended Application Circuit
GND
GSM850/900 RF INPUT
VCC2
GSM_IN
GSM_OUT
GSM850/900 RF OUTPUT
ADVANCED PRODUCT INFORMATION - Rev 0.1 01/2005
9
AWT6168
PACKAGE OUTLINE
Figure 3: Package Outline
10
ADVANCED PRODUCT INFORMATION - Rev 0.1 01/2005
AWT6168
NOTES
ADVANCED PRODUCT INFORMATION - Rev 0.1 01/2005
11
AWT6168
ANADIGICS, Inc.
141 Mount Bethel Road Warren, New Jersey 07059, U.S.A. Tel: +1 (908) 668-5000 Fax: +1 (908) 668-5132 URL: http://www.anadigics.com E-mail: Mktg@anadigics.com IMPORTANT NOTICE
ANADIGICS, Inc. reserves the right to make changes to its products or to discontinue any product at any time without notice. The product specifications contained in Advanced Product Information sheets and Preliminary Data Sheets are subject to change prior to a product's formal introduction. Information in Data Sheets have been carefully checked and are assumed to be reliable; however, ANADIGICS assumes no responsibilities for inaccuracies. ANADIGICS strongly urges customers to verify that the information they are using is current before placing orders.
WARNING
ANADIGICS products are not intended for use in life support appliances, devices or systems. Use of an ANADIGICS product in any such application without written consent is prohibited.
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ADVANCED PRODUCT INFORMATION - Rev 0.1 01/2005

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